Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
Identifieur interne : 00BE47 ( Main/Repository ); précédent : 00BE46; suivant : 00BE48Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
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Abstract
The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale. © 2003 American Institute of Physics.
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Kazlauskas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius</wicri:regionArea><wicri:noRegion>LT-2040 Vilnius</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical, Computer, and Systems Engineering and Broadband Center, Rensselaer Polytechnic Institute, Troy, New York 12180</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical, Computer, and Systems Engineering and Broadband Center, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Tamulaitis, G" uniqKey="Tamulaitis G">G. Tamulaitis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius</wicri:regionArea><wicri:noRegion>LT-2040 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Zukauskas, A" uniqKey="Zukauskas A">A. Zukauskas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius</wicri:regionArea><wicri:noRegion>LT-2040 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Khan, M A" uniqKey="Khan M">M. A. Khan</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, J" uniqKey="Zhang J">J. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius</wicri:regionArea><wicri:noRegion>LT-2040 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Lituanie</country><wicri:regionArea>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius</wicri:regionArea><wicri:noRegion>LT-2040 Vilnius</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0453066</idno><date when="2003-11-03">2003-11-03</date><idno type="stanalyst">PASCAL 03-0453066 AIP</idno><idno type="RBID">Pascal:03-0453066</idno><idno type="wicri:Area/Main/Corpus">00C783</idno><idno type="wicri:Area/Main/Repository">00BE47</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Computerized simulation</term><term>Excitons</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Monte Carlo methods</term><term>Photoluminescence</term><term>Theoretical study</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7135C</term><term>7855C</term><term>0270U</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Aluminium composé</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Méthode Monte Carlo</term><term>Photoluminescence</term><term>Exciton</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The temperature dependences of the peak position and width of the photoluminescence band in Al<sub>0.1</sub>In<sub>0.01</sub>Ga<sub>0.89</sub>N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping</s1></fA08><fA11 i1="01" i2="1"><s1>KAZLAUSKAS (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>TAMULAITIS (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZUKAUSKAS (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>KHAN (M. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZHANG (J.)</s1></fA11><fA11 i1="07" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="08" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA11 i1="09" i2="1"><s1>GASKA (R.)</s1></fA11><fA14 i1="01"><s1>Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, LT-2040 Vilnius, Lithuania</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical, Computer, and Systems Engineering and Broadband Center, Rensselaer Polytechnic Institute, Troy, New York 12180</s1></fA14><fA14 i1="04"><s1>Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209</s1></fA14><fA20><s1>3722-3724</s1></fA20><fA21><s1>2003-11-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0453066</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The temperature dependences of the peak position and width of the photoluminescence band in Al<sub>0.1</sub>In<sub>0.01</sub>Ga<sub>0.89</sub>N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. 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